Evaluation of C_<15>TCNQ Langmuir-Blodgett Ultrathin Films on Aluminum Thin Films by Attenuated Total Reflection Measurements

概要

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The attenuated total reflection (ATR) properties of C_<15>TCNQ Langmuir-Blodgett (LB) ultrathin films deposited on the Al thin films about 20 nm thick were measured in order to evaluate the actual structure. The C_<15>TCNQ LB ultrathin films were prepared by the vertical dipping method, using two deposition processes. The dielectric constants and the thicknesses of these deposited LB films were theoretically calculated from the ATR curves, taking into account the presence of the natural oxide layer on Al. It was considered that Z-type LB films were obtained when the deposition of each monolayer was carried out only as the substrated were withdrawn. In contrast, when monolayers were deposited during both upward and downward movements of the substrates, the resulting LB films were considered to be not perfect Y-type, but partially Z-type.
社団法人応用物理学会の論文
1996-10-15