Steady State Solutions of Diffusion Equations of Self-Interstitials and Vacancies in Silicon
スポンサーリンク
概要
- 論文の詳細を見る
Self-interstitial and vacancy diffusion equations taking account of the sink and source of these point defects are analytically studied in the steady state, assuming local equilibrium between these point defects. To determine the physically reasonable solutions, behavior of the point defects at the bulk surface is required as the boundary condition; however this has not been well understood. Therefore, self-interstitial and vacancy concentrations at the bulk surface are tentatively adopted as parameters. It was found that the exact steady state solutions depend on the specimen thickness. Substituting the solutions in the case of dislocation-free silicon into approximate relations, the time t_I or t_V at which self-interstitials or vacancies reach the steady state is determined.
- 社団法人応用物理学会の論文
- 1995-12-15
著者
-
下崎 敏唯
九州工業大学機器分析センター
-
ONISHI Masami
Department of Materials Science and Engineering, Chang-won National University
-
Okino T
College Of Liberal Arts And Sciences Nippon Bunri University
-
Okino Takahisa
College Of Liberal Arts & Sciences Nippon Bunri University
-
Shimozaki Toshitada
Center For Instrumental Analysis Dyushu Institute Of Technology
-
Onishi M
Department Of Materials Science And Engineering Chang-won National University
-
Onishi Masami
Department Of Materials Science And Engineering Kyushu Institute Of Technology
-
Takaue Ryoichi
Department Of Materials Science And Engineering Kyushu Institute Of Technology
-
TAKAUE Ryoichi
Department of Material Engineering, Faculty of Engineering, Kyushu Institute of Technology
関連論文
- 炭素鋼とクロム過飽和鉛融液との反応拡散
- B_4C, CおよびAl_2O_3を添加したSiC焼結体の熱電特性
- Ti/Siバルク拡散対内におけるTiシリサイドの成長挙動に及ぼすチタンの純度の影響
- 733∿818K における鉄と鉛-亜鉛融液との反応拡散
- 鉄とビスマス・亜鉛融液との反応
- 合金化溶融亜鉛めっきのメタラジー
- 鉄と鉛-亜鉛融液との反応
- 2元系相互拡散現象と異相界面反応
- 拡散によって形成される新相および既存相の成長挙動の数値解析
- 有限/半無限多相拡散対内における界面移動現象の数値解析
- 膜厚0.01〜0.1μmの薄膜/バルク拡散対を用いて決定される非常に小さな拡散係数の精度
- Pb-Ni融液を用いたFeへのNi拡散被覆
- 溶融Znめっきドロスと少量のAlの溶融混合体におけるFe-Al合金晶の形成反応
- 多相拡散対における中間相の層成長速度の律速因子と近似式
- 反応拡散対内における濃度-距離曲線の数値解析
- 反応拡散
- 光照射によるGaAlAs系発光ダイオード表面での酸素の浸透
- 2元系反応拡散における異相界面移動に関する界面反応と局所平衡
- The Role of Iron in Ti on the Growth of Ti Silicides in Bulk Ti/Si Diffusion Couples
- Effect of Impurities on Growth of Ti Silicides in Bulk Ti/Si Diffusion Couple
- Analysis of P and Sb Diffusion during Thermal Oxidation in Silicon
- Co/Siバルク拡散対における反応拡散
- 7a-S-7 シリコン中の不純物拡散の解析
- シリコンの酸化膜成長速度と格子間シリコン生成速度との関係
- 27a-N-7 シリコン中の格子間シリコンおよび空孔の拡散方程式の定常解
- Structure of Thermoelectric Material CoSb_3 Formed by Reactive Diffusion
- Reactive Diffusion between Ultra High Purity Iron and Silicon Wafer
- Thermoelectric Properties of Silicon Carbide Sintered with Addition of Boron Carbide, Carbon, and Alumina
- 金属とシリコンの反応拡散--純度に著しく依存するシリサイドの成長速度 (特集 金属拡散研究のすべて(上))
- 金属間化合物中の拡散に Darken/Mannig 式は適用できるか?
- Steady State Solutions of Diffusion Equations of Self-Interstitials and Vacancies in Silicon
- Analysis of Dopant Diffusion in Si with Stacking Faults
- Thermal Wave Tomography with Ray-Optic Reconstruction
- Analysis of Oxidation-Enhanced/Retarded Diffusions of Substitutional Impurities in Silicon
- Point and Swirl Defects in Silicom
- Correlations between Self-Interstitials and Vacancies during Thermal Oxidation in Silicon
- Self-Interstitials in Silicon
- Diffusivity of Self-Interstitials and Vacancies in Silicon
- Two-Time Three-Equation Method for Analysis of Oxidation-Enhanced and -Retarded Diffusions and Growth of Oxidation Stacking Faults in Silicon
- Effect of a Frenkel Pair Generation-Annihilation Term upon Diffusion Equations of Self-Interstitials and Vacancies
- Beginning Time of Formation of New Phase in Fe-Zn Diffusion Couple during Non-isothermal Diffusion and Numerical Analysis for the Phase Growth Behavior.