Analysis of Dopant Diffusion in Si with Stacking Faults
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概要
- 論文の詳細を見る
- Japan Institute of Metalsの論文
- 1999-06-20
著者
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Okino Takahisa
College Of Liberal Arts & Sciences Nippon Bunri University
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Okino Takahisa
College Of Liberal Arts And Sciences. Nippon Bunri University
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Shimozaki Toshitada
Center For Instrumental Analysis Dyushu Institute Of Technology
関連論文
- The Role of Iron in Ti on the Growth of Ti Silicides in Bulk Ti/Si Diffusion Couples
- Effect of Impurities on Growth of Ti Silicides in Bulk Ti/Si Diffusion Couple
- Analysis of P and Sb Diffusion during Thermal Oxidation in Silicon
- Structure of Thermoelectric Material CoSb_3 Formed by Reactive Diffusion
- Reactive Diffusion between Ultra High Purity Iron and Silicon Wafer
- Thermoelectric Properties of Silicon Carbide Sintered with Addition of Boron Carbide, Carbon, and Alumina
- Steady State Solutions of Diffusion Equations of Self-Interstitials and Vacancies in Silicon
- Analysis of Dopant Diffusion in Si with Stacking Faults
- Analysis of Oxidation-Enhanced/Retarded Diffusions of Substitutional Impurities in Silicon
- Point and Swirl Defects in Silicom
- Correlations between Self-Interstitials and Vacancies during Thermal Oxidation in Silicon
- Self-Interstitials in Silicon
- Diffusivity of Self-Interstitials and Vacancies in Silicon
- Two-Time Three-Equation Method for Analysis of Oxidation-Enhanced and -Retarded Diffusions and Growth of Oxidation Stacking Faults in Silicon
- Effect of a Frenkel Pair Generation-Annihilation Term upon Diffusion Equations of Self-Interstitials and Vacancies