Analysis of Oxidation-Enhanced/Retarded Diffusions of Substitutional Impurities in Silicon
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概要
- 論文の詳細を見る
Oxidation-enhanced/retarded diffusions of substitutional impurities in Si(OED)/ORD) are generally expressed by well-known equations consisting of self-interstitial and vacancy concentrations (I and V). From the asymptotic forms of the formal solutions of those equations, an approximate relation between I and V was obtained in the time range of interest. Identifying this approximate relation with that of local equilibrium between I and V gave a simple method by which to obtain mathematically self-consistent solutions of OED and ORD equations. Consequently, I and V were obtained as functions of the diffusion time. The fractional components of the interstitialcy mechanism for OED of P and ORD of Sb(d^P_1 and d^<Sb_1>) were obtained, with the first results being independent of time, i.e., d^P_1=0.93 and d^<Sb_1>=0.029 at 11OO℃.
- 社団法人応用物理学会の論文
- 1992-04-15
著者
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Okino T
College Of Liberal Arts And Sciences Nippon Bunri University
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Okino Takahisa
College Of Liberal Arts & Sciences Nippon Bunri University
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