Point and Swirl Defects in Silicom

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In the previous paper [Jpn. J. Appl. Phys. 32 (1993) L856], vacancy and silicon self-interstitial thermal equilibrium concentrations, i.e., C^o_v =2.1 × 10^17 cm^-3 and C^o_I =3.4 × 1O^16 cm^-3, were determined at 11OO℃ from ananalysis of experimental data of P and Sb diffusions in silicon during thermal oxidation. From the relationship between these values and the Boltzmann factor, C^O_I and C^_I are obtained as functions of the absolute temperature, T. Vacancy and self-interstitial diffusivities, D_V and D_I, are also given as functions of T by using the equation of D_vC^o_v or D_IC^o_I derived from Au diffusion experiments in silicon. Furthermore, the silicon self-diffusion mechanism is discussed and a successful model on the swirl defect formation mechanism is also proposed, using the obtained C^o_v, C^o_v, D_v and D_I. Consequently, C^o_v<C^o_v and D_v<D_I relations hold for arbitrary T. That is, the dominant thermale quilibrium defects in silicon are vacancies. It was also found that self-diffusion is mainly governed by the interstitialcy or vacancy mechanism for T>1158 K or T< 1158 K.
社団法人応用物理学会の論文
1994-12-15