Diffusivity of Self-Interstitials and Vacancies in Silicon
スポンサーリンク
概要
- 論文の詳細を見る
In my previous paper [Jpn. J. Appl. Phys. 31 (1992) 965], the self-interstitial and vacancy concentrations in silicon were obtained as a function of the diffusion time by analysing the experimental data for oxidation-enhanced/retarded diffusions of P/Sb. Using these results and the approximate solutions obtained from well-known diffusion equations of self-interstitials and vacancies, the self-interstitial and vacancy diffusivities, i.e., D_I=2.3×10^<-9> cm^2/s and D_V=2.3×10^<-9> cm^2/s, are determined at 1100℃. Furthermore, the thermal equilibrium concentrations of self-interstitials and vacancies, i.e., C^0_I=3.4×10^<16> cm^<-3> and C^0_V=2.1×10^<17> cm^<-3>, are also determined.
- 社団法人応用物理学会の論文
- 1993-06-15
著者
関連論文
- The Role of Iron in Ti on the Growth of Ti Silicides in Bulk Ti/Si Diffusion Couples
- Effect of Impurities on Growth of Ti Silicides in Bulk Ti/Si Diffusion Couple
- Analysis of P and Sb Diffusion during Thermal Oxidation in Silicon
- Structure of Thermoelectric Material CoSb_3 Formed by Reactive Diffusion
- Reactive Diffusion between Ultra High Purity Iron and Silicon Wafer
- Steady State Solutions of Diffusion Equations of Self-Interstitials and Vacancies in Silicon
- Analysis of Dopant Diffusion in Si with Stacking Faults
- Analysis of Oxidation-Enhanced/Retarded Diffusions of Substitutional Impurities in Silicon
- Point and Swirl Defects in Silicom
- Correlations between Self-Interstitials and Vacancies during Thermal Oxidation in Silicon
- Self-Interstitials in Silicon
- Diffusivity of Self-Interstitials and Vacancies in Silicon
- Two-Time Three-Equation Method for Analysis of Oxidation-Enhanced and -Retarded Diffusions and Growth of Oxidation Stacking Faults in Silicon
- Effect of a Frenkel Pair Generation-Annihilation Term upon Diffusion Equations of Self-Interstitials and Vacancies