Analysis of P and Sb Diffusion during Thermal Oxidation in Silicon

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概要

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• Using experimental results of oxidation-enhanced/retarded diffusions (OED/ORD) for P/Sb in silicon, OED and ORD equations are rewritten into differential equations for self-interstitials and vacancies (I and V). An extended relation of the local equilibrium between I and V, VI^m=n, is derived from asymptotic forms of formal solutions of OED and ORD equations. The differential equations are solved using VI^m=n, i.e., OED and ORD equations are simultaneously solved without any assumptions. Consequently, OED/ORD were governed by only the interstitialcy/vacancy mechanism. The local equilibrium between I and V did not occur in the present diffusion time range. From the obtained results, diffusivities of I and V, i.e., D_I=2.4×10^<-9> cm^2s^<-1> and D_V=2.1×10^<-10> cm^2s^<-1>, and also their thermal equilibrium concentrations, C^0_I=3.3×10^<16> cm^<-3> and C^0_V=2.2×10^<17> cm^<-3>, were determined at 1100℃.

• 社団法人応用物理学会の論文
• 1994-06-15

著者

• OKINO Takahisa

  College of Liberal Arts and Scences, Nippon Bunri University

• ONISHI Masami

  Department of Materials Science and Engineering, Chang-won National University

• Okino Takahisa

  College Of Liberal Arts And Sciences Nippon Bunri University

• Okino Takahisa

  College Of Liberal Arts & Sciences Nippon Bunri University

• Onishi M

  Department Of Materials Science And Engineering Chang-won National University

• Onishi Masami

  Department Of Materials Science And Engineering Kyushu Institute Of Technology

関連論文

• The Role of Iron in Ti on the Growth of Ti Silicides in Bulk Ti/Si Diffusion Couples
• Effect of Impurities on Growth of Ti Silicides in Bulk Ti/Si Diffusion Couple
• Analysis of P and Sb Diffusion during Thermal Oxidation in Silicon
• Structure of Thermoelectric Material CoSb_3 Formed by Reactive Diffusion
• Reactive Diffusion between Ultra High Purity Iron and Silicon Wafer
• Steady State Solutions of Diffusion Equations of Self-Interstitials and Vacancies in Silicon
• Analysis of Dopant Diffusion in Si with Stacking Faults
• Analysis of Oxidation-Enhanced/Retarded Diffusions of Substitutional Impurities in Silicon
• Point and Swirl Defects in Silicom
• Correlations between Self-Interstitials and Vacancies during Thermal Oxidation in Silicon
• Self-Interstitials in Silicon
• Diffusivity of Self-Interstitials and Vacancies in Silicon
• Two-Time Three-Equation Method for Analysis of Oxidation-Enhanced and -Retarded Diffusions and Growth of Oxidation Stacking Faults in Silicon
• Effect of a Frenkel Pair Generation-Annihilation Term upon Diffusion Equations of Self-Interstitials and Vacancies
• Beginning Time of Formation of New Phase in Fe-Zn Diffusion Couple during Non-isothermal Diffusion and Numerical Analysis for the Phase Growth Behavior.

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