RuO_2 Bottom Electrodes for Ferroelectric (Pb, La)(Zr, Ti) O_3 Thin Films by Metalorganic Chemical Vapor Deposition

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概要

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• RuO_2 thin films were grown on various substrates by metalorganic chemical vapor deposition (MOCVD) using Ru (C_<11>H_<19>O_2)_3. The films produced at 350℃ in O_2 had a tetragonal rutile structure and a resistivity of 60μΩ cm with excellent adhesion. From the viewpoint of integrated device applications, lanthanum-modified lead zirconate titanate (PLZT) films were also prepared by MOCVD. The RuO_2 films were found to serve as effective diffusion barriers for PLZT and MgO. Significant interdiffusion at RuO_2/Si and RuO_2/SiO_2 interfaces occurred during the deposition of PLZT films, and annealing of RuO_2 film considerably depressed the interface reactions. Ta_2O_5 film served as an excellent barrier against the interface reaction between RuO_2 and Si. The dielectric and ferroelectric properties of PLZT thin films on the RuO_2/MgO and RuO_2/Ta_2O_5/Si substrates were superior compared to those observed with RuO_2/Si and RuO_2/SiO_2/Si substrates.

• 社団法人応用物理学会の論文
• 1995-08-15

著者

• Okada Masaru

  Department Of Industrial Chemistry Faculty Of Engineering Chubu University

• Kobayashi Ichizo

  Tsukuba Laboratories Nippon Sanso Corporation

• Takagi Takeshi

  Department Of General And Cardiothoracic Surgery Kanazawa University

• OIZUKI Isamu

  Department of Industrial Chemistry, Faculty of Engineering, Chubu University

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