Preparation of Pb(Zr, Ti)O_3 Thin Films Using All Dipivaloylmethane Source Materials by Metalorganic Chemical Vapor Deposition
スポンサーリンク
概要
- 論文の詳細を見る
Pb-bis-dipivaloylmethane [Pb(DPM)_2], Zr(DPM)_2 and Ti(DPM)_2(i-OC_3H_7)_2 are developed as the new chemical vapor deposition (CVD) sources for lead zirconate titanate (PZT) thin film. The growth rate of each of the single metal oxides PbO, ZrO_2 and TiO_2, was studied as a function of oxygen partial pressure. The growth rates of ZrO_2 and TiO_2 were independent of the input oxygen partial pressure, while the growth rate of PbO increased with increasing input oxygen partial pressure. PZT films were grown on (100) MgO substrates at 2.0 Torr by metalorganic chemical vapor deposition(MOCVD). The film grown at 500℃ was amorphous. The film grown at 550℃ was a mixed phase of a-axis- and c-axis-oriented perovskite. The film grown at 600℃ was a single-phase c-axis-oriented perovskite.
- 社団法人応用物理学会の論文
- 1992-09-30
著者
-
KOBAYASHI Ichizo
Tsukuba Laboratory, Nippon Sanso Corporation
-
Yamazaki Hiroshi
Tsukuba Laboratory Nippon Sanso Corporation
-
TSUYAMA Tomoko
Tsukuba Laboratory, Nippon Sanso Corporation
-
SUGIMORI Yoshiaki
Tsukuba Laboratory, Nippon Sanso Corporation
-
Tsuyama Tomoko
Tsukuba Laboratory Nippon Sanso Corporation
-
Sugimori Yoshiaki
Tsukuba Laboratory Nippon Sanso Corporation
-
Kobayashi Ichizo
Tsukuba Laboratories Nippon Sanso Corporation
関連論文
- Synthesis of Ti(DPM)_2(OCH_3)_2 and Evaluation of the TiO_2 Films Prepared by Metal-Organic Chemical Vapor Deposition
- Preparation of SrTiO_3 Films on 8-Inch Wafers by Chemical Vapor Deposition
- Effect of Substrate Temperature on Electrical Characteristics of (Pb, La)(Zr, Ti)O_3 Ultrathin Films Deposited by Metalorganic Chemical Vapor Deposition
- Preparation of Pb(Zr, Ti)O_3 Thin Films Using All Dipivaloylmethane Source Materials by Metalorganic Chemical Vapor Deposition
- RuO_2 Bottom Electrodes for Ferroelectric (Pb, La)(Zr, Ti) O_3 Thin Films by Metalorganic Chemical Vapor Deposition