Novel Automatic Measuring System for Resistivity Profiles in Silicon Wafers
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概要
- 論文の詳細を見る
A novel automatic system has been developed for readiness and accuracy of resistivity profile measurement. The automatic system procedes through numerous cycles of seven processes ; anodic oxidation, washing, drying, etching, washing, drying and sheet resistivity measurement by a four-point probe. The oxide film thickness is precisely controlled in a constant current and time condition with ethylene glycol electrolyte solution. Furthermore, this system was applied to the measurement of carrier concentration profiles in arsenic and boron implanted silicon wafers. The measured concentration peak positions were closely coincident with the values calculated by LSS theory.
- 社団法人応用物理学会の論文
- 1980-01-05
著者
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Kajiyama Kenji
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Nakamura Hiroaki
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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KOMATSU Ryosaku
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Komatsu Ryosaku
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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