Anomalous Resistivity Change in B Doped Polycrystalline Si Caused by BN Formation under N_2 Heat-Treatment

スポンサーリンク

概要

• 論文の詳細を見る

• B doped Si films were obtained by thermal decomposition of SiH_4-BCl_3-H_2 gas mixture at 550℃ onto thermally grown SiO_2 and were heat-treated in N_2 or Ar at 1100℃. The B doped polycrystalline Si exhibits an anomalous increase in resistivity for N_2 heat-treatment. IMA, AES, EM and IR measurements reveal that the resistivity increase is due to decrease in B concentration in polycrystalline Si, which is caused by BN formation near the polycrystalline Si surface. The decrease rate of B concentration in polycrystalline Si and BN formation rate were measured and it is concluded that BN formation rate is determined by B and N reaction velocity.

• 社団法人応用物理学会の論文
• 1977-10-05

著者

• Makino Takahiro

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Nakamura Hiroaki

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

関連論文

• Effect of Growth Temperature on Si MBE Film
• The Distribution of the Excess Vacancies in the Bulk at the Diffusion of Phosphorus into Silicon
• Phosphorus Diffusion in Silicon Free from the Surface Effect under Extrinie Conditions
• Anomalous Resistivity Change in B Doped Polycrystalline Si Caused by BN Formation under N_2 Heat-Treatment
• Diboran-Carbon Dioxide System for Boron Diffusion into Silicon at Low Temperature
• Electrical and Optical Properties of Boron Doped Amorphous Si Prepared by CVD Method
• Novel Automatic Measuring System for Resistivity Profiles in Silicon Wafers

スポンサーリンク