Kinetics of Antimony Doping in Silicon Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1983-03-20
著者
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Tabe Michiharu
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Kajiyama Kenji
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
関連論文
- Effect of Growth Temperature on Si MBE Film
- Kinetics of Antimony Doping in Silicon Molecular Beam Epitaxy
- Etching of SiO_2 Films by Si in Ultra-High Vacuum
- In Situ Self Ion Beam Annealing of Damage in Si during High Energy (0.53 MeV-2.56 MeV) As^+ Ion Implantation
- High Energy As^+ Ion Implantation into Si : Arsenic Profiles and Electrical Activation Characterustics
- Precise Profiles for Arsenic Implanted in Si and SiO_2 over a Wide Implantation Energy Range (10 keV-2.56 MeV)
- Surface Silicon Crystallinity and Anomalous Composition Profiles of Buried SiO_2 and Si_3N_4 Layers Fabricated by Oxygen and Nitrogen Implantation in Silicon
- Quantitative Analysis of Etching Rate Profiles for ^B^+-Implanted Si_3N_4 Film
- Novel Automatic Measuring System for Resistivity Profiles in Silicon Wafers