High Energy As^+ Ion Implantation into Si : Arsenic Profiles and Electrical Activation Characterustics
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概要
- 論文の詳細を見る
High energy (a few MeV) As^+ was uniformly implanted into 2" Si (111) wafers at doses of 10^<13>-10^<16> cm^<-2>. Implanted As profiles were precisely measured by the Rutherford backscattering method (RBS) over a wide energy range (0.5-2.5 MeV). Experimental values for R_p and ?R_p were larger than the LSS calculation values by about 15% and 30%, respectively. After annealing, carrier profiles were measured by the differential sheet resistance and C-V methods. They agreed well with a Gaussian distribution, defined by R_p and ?R_p measured by RBS, from peak to surface over 4 figures of concentration. Implanted As is easily activated by 700℃ annealing with low doses (∼10^<14> cm^<-2>). Activation ratio depends mainly on peak arsenic concentration and not on implantation energy.
- 社団法人応用物理学会の論文
- 1981-11-05
著者
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Nakata Jyoji
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Kajiyama Kenji
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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TAKAHASHI Mitsutoshi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Takahashi Mitsutoshi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
関連論文
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