Precise Profiles for Arsenic Implanted in Si and SiO_2 over a Wide Implantation Energy Range (10 keV-2.56 MeV)

スポンサーリンク

概要

• 論文の詳細を見る

• Arsenic ions were implanted into Si and SiO_2 over a wide energy range (10 keV-2.56 MeV). Implantation profiles were precisely measured by the normal and glancing angle Rutherford backscattering method. They are closely approximated by joined half-Gaussian distributions. For Si, the experimental R_p and ?R_p values are systematically 〜15% and 〜30% larger than the LSS calculation values over the present full implantation energy range of 10 keV-2.56 MeV. For SiO_2 the experimental R_p and ?R_p values are systematically 20-30% and 40-50% larser over the same implantation energy range. The experimental third-moment, μ_p, is positive below 〜500 keV, and is negative above 〜500 keV implantation energy, for both Si and SiO_2.

• 社団法人応用物理学会の論文
• 1982-09-20

著者

• Nakata Jyoji

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Kajiyama Kenji

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

関連論文

• Kinetics of Antimony Doping in Silicon Molecular Beam Epitaxy
• In Situ Self Ion Beam Annealing of Damage in Si during High Energy (0.53 MeV-2.56 MeV) As^+ Ion Implantation
• High Energy As^+ Ion Implantation into Si : Arsenic Profiles and Electrical Activation Characterustics
• Precise Profiles for Arsenic Implanted in Si and SiO_2 over a Wide Implantation Energy Range (10 keV-2.56 MeV)
• Surface Silicon Crystallinity and Anomalous Composition Profiles of Buried SiO_2 and Si_3N_4 Layers Fabricated by Oxygen and Nitrogen Implantation in Silicon
• Quantitative Analysis of Etching Rate Profiles for ^B^+-Implanted Si_3N_4 Film
• Novel Automatic Measuring System for Resistivity Profiles in Silicon Wafers

スポンサーリンク