Surface Silicon Crystallinity and Anomalous Composition Profiles of Buried SiO_2 and Si_3N_4 Layers Fabricated by Oxygen and Nitrogen Implantation in Silicon
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概要
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Buried SiO_2 and Si_3N_4 with residual crystalline surface silicon were fabricated by implantation of O^+, O^+_2, N^+ and N^+_2 into single-crystal silicon with 0.6-3.0×10^<18> atom/cm^2 dose at an energy of 70-150 keV/atom. The implanted silicon wafers were annealed at 1150℃ to recover the surface silicon crystallinity and to ensure good Si-O and Si-N bonds. After this, high-quality crystalline silicon layers were grown epitaxially on the implanted surface. The surface silicon damage and the buried layer composition profiles were measured reliably by the Rutherford backscattering method together with the channeling technique. In the buried layers, the O/Si ratio did not exceed the stoichiometric ratio of 2.0 for SiO_2 even before annealing. However, the N/Si ratio exceeded the stoichiometric ratio of 4/3 for Si_3N_4.
- 社団法人応用物理学会の論文
- 1982-05-20
著者
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Maeyama Satoshi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Kajiyama Kenji
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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- Surface Silicon Crystallinity and Anomalous Composition Profiles of Buried SiO_2 and Si_3N_4 Layers Fabricated by Oxygen and Nitrogen Implantation in Silicon
- Quantitative Analysis of Etching Rate Profiles for ^B^+-Implanted Si_3N_4 Film
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