In Situ Self Ion Beam Annealing of Damage in Si during High Energy (0.53 MeV-2.56 MeV) As^+ Ion Implantation
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概要
- 論文の詳細を見る
High energy As^+ ions have been implanted by a 2.5 MeV Van-de-Graaff accelerator. Implantation induced damage in silicon crystal is anomalously smaller than that estimated from the calculation for nuclear deposited energy density. The logarithm for observed damage degree depends linearly on the inverse absolute temperature of the wafer during implantation. The 0.18 eV activation energy coincides with the 0.18 eV migration energy for the doubly negative vacancy. The anomalously small damage is attributed to in situ recrystallization of damage assisted by migration of the doubly negative vacancy (V^<-->) which is formed by high energy heavy ion implantation. As the wafer temperature is below 300℃, and activation energy is small, ordinary solid phase epitaxial regrowth does not occur.
- 社団法人応用物理学会の論文
- 1981-11-05
著者
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Nakata Jyoji
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Kajiyama Kenji
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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TAKAHASHI Mitsutoshi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Takahashi Mitsutoshi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
関連論文
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- In Situ Self Ion Beam Annealing of Damage in Si during High Energy (0.53 MeV-2.56 MeV) As^+ Ion Implantation
- High Energy As^+ Ion Implantation into Si : Arsenic Profiles and Electrical Activation Characterustics
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- Surface Silicon Crystallinity and Anomalous Composition Profiles of Buried SiO_2 and Si_3N_4 Layers Fabricated by Oxygen and Nitrogen Implantation in Silicon
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