Nakata Jyoji | Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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概要
- 同名の論文著者
- Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporationの論文著者
関連著者
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Nakata Jyoji
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Kajiyama Kenji
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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TAKAHASHI Mitsutoshi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Takahashi Mitsutoshi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
著作論文
- In Situ Self Ion Beam Annealing of Damage in Si during High Energy (0.53 MeV-2.56 MeV) As^+ Ion Implantation
- High Energy As^+ Ion Implantation into Si : Arsenic Profiles and Electrical Activation Characterustics
- Precise Profiles for Arsenic Implanted in Si and SiO_2 over a Wide Implantation Energy Range (10 keV-2.56 MeV)
- Quantitative Analysis of Etching Rate Profiles for ^B^+-Implanted Si_3N_4 Film