Diboran-Carbon Dioxide System for Boron Diffusion into Silicon at Low Temperature

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1972-05-05

著者

• Nakamura Hiroaki

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Nakamura Hiroaki

  Musashino Electrical Comunication Laboratory

関連論文

• Effect of Growth Temperature on Si MBE Film
• The Distribution of the Excess Vacancies in the Bulk at the Diffusion of Phosphorus into Silicon
• Phosphorus Diffusion in Silicon Free from the Surface Effect under Extrinie Conditions
• Anomalous Resistivity Change in B Doped Polycrystalline Si Caused by BN Formation under N_2 Heat-Treatment
• Diboran-Carbon Dioxide System for Boron Diffusion into Silicon at Low Temperature
• Electrical and Optical Properties of Boron Doped Amorphous Si Prepared by CVD Method
• Novel Automatic Measuring System for Resistivity Profiles in Silicon Wafers

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