3. プラズマ中の微粒子生成過程 (<講座>プラズマCVDの基礎)

概要

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This paper reviews growth processes of particles in processing plasmas focusing especially on capacitively coupled silane discharge plasmas. Particles grow in three phases: the initial growth phase up to a critical size of about 10 nm; the rapid growth phase up to a few 10's-100 nm; and the growth saturation phase above a few 10's-100 nm. The initial growth of particles is dominated by three factors in the region where reactive species which contribute to particle nucleation (SiH_2 for SiH_4 plasmas) are generated: the generation and reaction rates of the reactive species, and the loss rate of reactive species and particles due to diffusion. In the rapid growth phase, growth due to coagulation above the critical size of 10 nm is enhanced by the presence of both a large proportion of electrically neutral particles and electrons with a high enough energy to ionize them. The growth saturation phase begins when almost all of the particles have become negatively charged. The models for explaining the initial and subsequent growth phases of particles are introduced based on previously reported results regarding particle growth.
社団法人プラズマ・核融合学会の論文
2000-09-25