4. プラズマCVDにおける薄膜堆積過程 (<講座>プラズマCVDの基礎)

概要

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A mechanism of film formation in plasma CVD is explained in terms of three successive reaction processes; (i) reaction process in a vapor phase, (ii) reaction process on a substrate surface and (iii) reaction process in a deposited film. Gaseous molecules introduced into a CVD reactor as raw materials cause reactions such as dissociation, recombination, and ionization in a plasma, and various kinds of chemical species are generated because of energetic electrons in the plasma. The great diversity of the chemical species generated in the plasma play a strong role in determining the advantages and disadvantages of plasma CVD. These chemical species impinge on a substrate surface and cause reactions on the surface. Some active species initially react and form chemical bonds with a substrate material and then with a growing film after migrating on the surface. During deposition, certain chemical reactions proceed in the growing film. Via these reaction processes, the film grows on the substrate. Understanding the reactions in the three reaction processes is, therefore, important in order to optimize process parameters and deposit high quality films.
社団法人プラズマ・核融合学会の論文
2000-10-25