Monolithic VCOs with High Q MEMS Inductors for RF Applications (Devices:先端デバイスの基礎と応用に関するアジアワークショップ)

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概要

• 論文の詳細を見る

• We have developed high Q spiral inductors that make use of MEMS(MicroElectroMechanicalSystems)technology and fabricated VCOs(Voltage Controlled Oscillators)for Wireless LAN applications. The high Q-value of spiralinductors was achieved by air-suspended and thick copper metal electroplated structures. The fabricated spiral inductors weresuspended 20 μm over the substrate to reduce the substrate coupling loss and have thick metal layers(〜10μm) to reduce ohmicloss. The measured Q-value of spiral inductors is over 20 at several GHz for the silicon substrate. Fully integrated 2.4 GHzCMOS VCOs were fabricated by monolithically integrating these MEMS high Q inductors on the top of the CMOS activecircuits realized by the Hynix 0.18μm CMOS process. As post-CMOS process, the MEMS fabrication processes wereperformed at low temperature below 150℃. The phase noise of VCOs with integrated MEMS inductors is 93.5dBc/Hz at100kHz of offset frequency and this phase noise value of VCOs with MEMS inductors is improved approximately 60% compared to that of VCOs with CMOS inductors. The 5GHz SiGe VCOs have been designed and are being fabricated by IBM SiGe process, which will be monolithically integrated with MEMS high Q inductors.

• 社団法人電子情報通信学会の論文
• 2003-06-24

著者

• CHUN Kukjin

  School of Electrical Engineering and Inter-university Semiconductor Research Center (ISRC), Seoul Na

• Chun Kukjin

  School Of Electrical Engineering And Computer Science #038 And Inter-university Semiconductor Resear

• Yook Jong-kwan

  School Of Electrical Engineering Yon Sei University

• Lee Y.h.

  School Of Electrical Engineering Yon Sei University

• Kim I.h.

  School Of Electrical Engineering Seoul National University

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