Device Parameter Estimation of SOI MOSFET Using One-Dimensional Numerical Simulation Considering Quantum Mechanical Effects
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概要
- 論文の詳細を見る
We have been studying on subthreshold characteristics of SOI (Silicon-On-Insulator) MOSFET's in terms of substrate bias dependence using a one-dimensional subthreshold device simulator based on Poisson equation in an SOI multi-layer structure for estimating structural parameters of real devices. Here, we consider the quantum mechanical effects in the electron inversion layer of thin SOI MOSFET's, such as the two-dimensionally quantized electron states and transports, with a self-consistent solver of Poisson and Schrodinger equations and a mobility model by the relaxation time approximation. From results of simulations, we found a significant difference between this model and the classical model and concluded that the quantum mechanical effects need to be considered in analizing thin-film SOI devices.
- 社団法人電子情報通信学会の論文
- 1997-06-25
著者
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ITO Hiroshi
Department of Internal Medicine, Division of Cardiovascular Medicine, Akita University Faculty of Me
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ASADA Kunihiro
VLSI Design and Education Center (VDEC), The University of Tokyo
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Ikeno Rimon
Dsp Development Japan Worldwide Development Application Specific Products Tsukuba Technology Center
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Ikeno R
Texs Instruments Japan Tsukuba‐shi Jpn
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Ikeno Rimon
Department Of Electronic Engineering University Of Tokyo
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Asada K
Faculty Of Engineering And Vlsi Design And Education Center (vdec) The University Of Tokyo
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Asada Kunihiro
Vlsi Design And Education Center (vdec) The University Of Tokyo
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Asada Kunihiro
Vlsi Design And Education Center The University Of Tokyo
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Ito Hiroshi
Department Neurosurgery Tokyo Medical College
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