Anisotropy Field and Electrical Resistivity in Magnetically Soft Co-Pd-Si-O Thin Films
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概要
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A study was made of the properties and structure of Co-Si-Pd-O based films, prepared by reactive sputtering method. Soft magnetic properties are found in the films with O content at the percolation threshold, and realized in the composition range more than 2%Si and 5%Pd in Co-Si-Pd-(0) pseudo-ternary system films. A larger Hk than 200 Oe is attained in the soft magnetic films near 8%Si and more than 10%Pd, where ρ is about 1000μΩcm. The compositional dependence of these properties except Hk can be explained by the structure change with composition. A large Hk can be easily controlled by magnetic annealing from 0 to more than 200 Oe, which originates in the induced magnetic anisotropy.
- 社団法人日本磁気学会の論文
- 1999-01-20
著者
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Mitani S.
Institute for Materials Research, Tohoku University
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Fujimori H.
Institute for Materials Research, Tohoku University
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Masumoto T
The Research Institute For Electric And Magnetic Materials
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Masumoto T.
The Research Institute For Iron Steel And Other Metals
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Ohnuma S.
The Research Institute for Electric and Magnetic Materials
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Kobayashi N.
The Research Institute for Electric and Magnetic Materials
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Ohnuma S
The Research Institute For Electric & Magnetic Materials
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Mitani S
Institute Of Materials Research Tohoku University
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Masumoto T.
The Research Institute For Electric And Magnetic Materials
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Mitani S.
Institute For Materials Research Tohoku University
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Fujimori H.
Institute For Materials Research Tohoku Univ.
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Ohnuma S.
The Research Institute for Electric & Magnetic Materials
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