Transport Phenomena and Giant Magnetoresistance for an Annealed Co-Al-O Granular Film
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概要
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A Co-Al-O granular thin film was prepared on glass substrates by reactive sputtering method with mixed gas of Ar+O_2. The sample was annealed at 300℃ for various annealing time to change the microstructure. The temperature dependence of electrical resistivity (ρ) shows the relationship of logρ versus T^-<1/2> for the sample annealed for 1and 6 hours. However, the sample annealed for 38 hours shows the relationship of logρ versus T^-<1/4>, which represents a significant change in the transport mechanism. Although the transport mechanism was changed, GMR appeared for 38hours-annealed sample. The magnitude of GMR decreases with increasing annealing time. Particularly, GMR reveals a noticeable decrease at low temperatures on annealing.
- 社団法人日本磁気学会の論文
- 1999-01-20
著者
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Mitani S.
Institute for Materials Research, Tohoku University
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Takanashi K.
Institute for Materials Research, Tohoku University
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Fujimori H.
Institute for Materials Research, Tohoku University
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Ha Jae-geun.
Kwangwoon University
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Mitani S
Institute Of Materials Research Tohoku University
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Mitani S.
Institute For Materials Research Tohoku University
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Takanashi K.
Institute For Materials Research Tohoku Univ.
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Fujimori H.
Institute For Materials Research Tohoku Univ.
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Ha Jae-Geun
Kwangwoon University
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