Preparation of ferromagnetic tunneling junctions by ion beam sputtering
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概要
- 論文の詳細を見る
We prepared ferromagnetic tunneling junctions by ion beam sputtering technique and measured magnetoresistance and I-V characteristics. Insulating barriers with the barrier height of 0.1-0.6eV were formed by exposing a thin Al metal layer to Ar+O_2 beam from the assist ion source. The magnetoresistance of 4% was observed in Fe/Al-O/NiFe/FeMn at 77K.Inserting a thin Co layer between the insulating barrier and the NiFe layer improved the magnetoresistance up to 18%.
- 社団法人日本磁気学会の論文
- 1999-01-20
著者
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Fujimori H.
Institute for Materials Research, Tohoku University
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Saito K.
The Authors Are With Research Institute Of Electrical Communication Tohoku University
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SAITO K.
Institute for Materials Research, Tohoku University
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Takanashi K.
Institute For Materials Research Tohoku Univ.
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Fujimori H.
Institute For Materials Research Tohoku Univ.
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Yamanaka H.
Read-Rite SMI Co.
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