微細反平行結合素子の磁化状態とスピン反転磁場(薄膜)

概要

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Arrays of synthetic antiferromagnetic (SyAF) patterned elements were successfully fabricated with micron to submicron sizes. Their magnetic domain structures and spin-switching fields were investigated by using magnetic force microscopy (MFM) and the magnetic optical Kerr effect (MOKE), respectively. A single-domain structure was observed in Co_9Fe/Ru/Co_9Fe SyAF bits for even a small aspect ratio of 1, while Co_9Fe monolayer bits showed a multi-domain structure for aspect ratios below 2. The spin-switching field of Co_9Fe (6 nm)/Ru (0.45 nm)/Co_9Fe (10 nm) SyAF exhibited independence of element size, while that of Co_9Fe (10 nm) single elements was strongly dependent on element size. These results indicate the predominance of SyAF for ultrahigh-bit-density MRAM devices.
社団法人日本磁気学会の論文
2003-04-01