シリコンナノ結晶鎖の成長メカニズム(<小特集>ナノ結晶)

概要

論文の詳細を見る
We have found a new route for fabricating self-organized semiconductor-insulator nanostructures by utilizing periodic instability in wetting property at nano-interface. Via an extension of the vapor-liquid-solid process with gold catalysts, we have grown chains of crystallinesilicon nanospheres: crystalline-silicon nanospheres are connected by and covered with amorphous silicon oxide at a nearly equal spacing forming chain-like structures. Special attention was paid to controlling impurities and we found that the yield of the chains growth increased remarkably when we used complex catalysts of such as gold/lead. The growth mechanism of the chains was revealed by means of transmission electron microscopy observations and computer simulations: the diameter of a silicon nano-wire was modulated due to the periodic instability and then the array of silicon nanocrystallites was formed by the surface oxidation.
日本結晶成長学会の論文
2001-10-12