GaAs,AlGaAs成長時の表面,界面のナノオーダ凹凸の制御

概要

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Surface morphologies of GaAs grown by metalorganic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) are compared. Since a stepflow growth mode is dominant for MOVPE, regularly-arrayed wide terraces are formed. 0n the other hand, two-dimensional growth mode, which is dominant for MBE, generates many sizes of islands on the surface. The wide terrace is supposed to be formed by the enhanced surface migration of column-III adatoms possibly caused by the hydrogen termination on the top surface As. A nanometer-scale surface and interface roughness are controllable by the suface adatom concentration. Formation of two-dimensional islands, rough steps and bunched steps, which are factors degrading roughness, can be controlled by growth temperature and substrate misorientation angle for MOVPE growth. Moreover, the monolayer terrace width can be controlled in the range from 16 nm to 1μm. These sophisticated interfaces are expected to improve quantum devices.
日本結晶成長学会の論文
1995-09-25