422 低残留応力膜の形成(WS-1 マイクロデバイスの加工と材料評価)

概要

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In this research a new thick film forming process with low residual stress has been developed, where the bow of substrate during the process of device fabrication is restrained by depositing the film with controlling its residual stress. In this film forming process, an SiO_2 film was deposited by making tensile and compressive films alternately, and the deposited surface was covered with compressive film in order to get stable residual stress. Stability of residual stress and the relationship between residual stress and RF power were investigated by experiments. The experimental result of film deposition reveals that the residual stress was controlled with wide range from tensile to compressive, and its stresses didn't change after the deposition by covering the surface with compressive stress layer.
社団法人日本機械学会の論文
2001-03-16