高電圧極短パルスプラズマの層状構造制御によるCVD核発生プロセス制御

概要

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Active control of gas phase and surface reactions in CVD processes of diamond thin films has been performed by use of a high-voltage and ultrashort pulse plasma. Effects of applying this pulse plasma on the nucleation density in CVD of diamond thin film have been examined by superimposing ultrashort high-voltage pulses on the usual DC plasma, and the nucleation density has been found to be significantly enhanced by this method. This effect is more marked at longer pulse widths. Optical measurements of the time-dependent change of the plasma structure show that the pulse plasma has a well-defined stratified structure with strong radical emission intensity in the positive column, where high-density radicals are being formed near the anode. This phenomen on results in the increase of instantaneous supersaturation of key radicals on the anode substrate and then the increase of nucleation density of diamond particles.
一般社団法人日本機械学会の論文
1996-01-25