方形波パルス無声放電を用いた非平衡プラズマ化学反応による高段差被覆性シリコン酸化膜の形成

概要

論文の詳細を見る
Oxygen atoms play a very important role in atmospheric pressure chemical vapor deposition (CVD) processes for silicon oxide films using tetraethylorthosilicate (TEOS) and ozone. Efficient generation of active oxygen species including these oxygen atoms is realized by use of a square-pulsed silent discharge with very sharp rising and falling of applied voltage. In this study, nonequilibrium plasma chemical reactions by this discharge have been applied to a remote plasma CVD of silicon oxide films using TEOS and oxygen. And deposition characteristics of silicon oxide films by this method have been measured experimentally, and these have been compared with CVD characteristics using low frequency AC silent discharge. Futhermore, these have been compared with deposition characteristics of silicon oxide films using TEOS and ozone. As a result, it has been clarified that silicon oxide films with high quality of step coverage and high deposition rate of these films can be obtained by the remote plasma CVD using pulsed silent discharge.
一般社団法人日本機械学会の論文
1999-11-25