高電圧パルス付加還元炎によるダイヤモンドの微結晶化制御と平滑膜の合成 : 熱工学,内燃機関,動力など

概要

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A control method of crystal growth for diamond films has been established with improving the surface quality by use of highly reducing name with high-voltage pulse discharge. The nucleation density, the crystal diameter and the surface roughness can be controlled actively by applying the high-voltage pulse on the substrate. Especially, it is also possible that pulse current over 40 mA changes the crystal surface direction. When ion flux flows to substrate, the nucleation density of diamond increases with the pulse voltage, and then smoothed surface films can be obtained. On the other hand, when electron flux flows to substrate the surface morphology hardly changes. This is due to the CH_3^+ ion flux, which is considered to be diamond precursor, increases with the electric field and become higher than CH_3 thermal flux multiplied the sticking probability. This phenomena results in the increase of supersaturation of the radicals on the substrate and in the enhancement of nucleation. Simultaneously, CH_3^+ sticking coefficient itself increases, because of both high incidence speed of CH_3^+ flux to the substrate and high directionality.
一般社団法人日本機械学会の論文
2001-09-25