チョコラルスキー法によるバルク単結晶成長過程の熱応力解析 : 異方性解析と等方性解析の比較

概要

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A three-dimensional finite element proqram is developed for calculating thermal stress in bulk single crystals during Czochralski growth. Elastic anisotropy is taken into account in this program. Thermal stress analyses of a GaAs bulk single crystal are performed in the cases of [001] and [111] pulling directions using its temperature distribution obtained from a heat conduction analysis and its material properties. The stress component and the parameter representing dislocation density are compared between the anisotropic analysis taking account of elastic anisotropy and the isotropic analysis using the Young's modulus and the Poisson's ratio in the {111} plane. Significant differences are found in their values and distribution patterns between both analyses.
社団法人日本機械学会の論文
1991-04-25