BaB_2O_4を添加したチタン酸バリウムの焼結性と電気的・機械的特性

概要

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Effects of sintering additives on mechanical and electrical properties of Gd-doped barium titanate ceramics have been studied by measuring their electrical resistivity, bending strength, and ESR spectra. The bulk density of the sample prepared by sintering at 1100℃ with small amounts of BaB_2O_4 doped as sintering aids was as high as 90% of the theoretical value. Semiconducting BaTiO_3 was obtained by sintering the BaB_2O_4-doped samples at 1100℃. The electrical resistivity of the 3mol% BaB_2O_4-doped sample sintered at 1100℃ was the lowest in all samples and its PTCR jump was more than 4 orders of magnitude. In addition, the bending strength of the sample was the highest in all samples and the value was close to that of the sample sintered at 1380℃ without sintering additives. The line width of the ESR signal of Gd^<3+> observed in the sample sintered at 1100℃ with BaB_2O_4 was almost equal to that in the sample sintered at 1380℃ without sintering additives. The result showed that in the samples doped with BaB_2O_4 as a sintering aids, Gd^<3+> ions were dissolved uniformly in BaTiO_3 grains at a sintering temperature of 1100℃.
社団法人日本材料学会の論文
2002-11-15