SiCの高温酸化に及ぼす水蒸気の影響

概要

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The effect of water vapor on the oxidation of refractory-grade SiC particles at 1400℃ was studied in oxidizing atmospheres with controlled water vapor content. The oxidation rate was determined by measuring the evolved gases using a quadrupole mass-spectrometer. The water vapor in O_2 accelerated the oxidation of free carbon and SiC, and the oxidation kinetics obeyed the parabolic law. The oxidation rate in a wet Ar atmosphere increased with increasing water vapor content in the range from 7 to 19.5 vol%H_2O, and the kinetics also obeyed the parabolic law. On the other hand, at a low water vapor content (0.6 vol%H_20) in wet Ar, the oxidation rate was the highest, and the kinetics obeyed the linear law, indicating that the active oxidation occurred in this case.
社団法人日本セラミックス協会の論文
1992-10-01