塗布熱分解法によるMgO(100)基板上のエピタキシャルPb(Zr,Ti)O_3薄膜の作製

概要

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Epitaxially grown Pb (Zr, Ti)O_3(PZT) (Zr : Ti=52 : 48) films with crack- and void-free smooth surfaces were successfully prepared on MgO(100) substrates by dipping-pyrolysis process using a solution of constituent metal naphthenates. Epitaxial PZT films were considered to crystallize directly from the amorphous precursor, not via the pyrochlore phase. Epitaxy and surface morphology of the films were found to depend chiefly on their crystallinity. The crystallinity and epitaxy of the films increased with increasing final heat treatment temperature in the range 650-750℃. However, optimum surface morphology, i.e., a smooth and homogeneous texture, was obtained at lower crystallinity, for example, with the film pyrolyzed at 500℃ and finally heat-treated at 650℃. On the other hand, prefiring at low-temperature lowered the crystallinity of the product films if the final heat treatment temperature was the same. Namely, the film prefired at 200℃ and finally heat-treated at 750℃ showed similar crystallinity and morphology with the above 500℃-pyrolyzed and 650℃-annealed film.
社団法人日本セラミックス協会の論文
1997-11-01