A Disclination as a Growth Center of Surface Crystals
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概要
- 論文の詳細を見る
- 社団法人日本物理学会の論文
- 1973-07-05
著者
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Hasiguti Ryukiti
Department Of Mechanical Engineering Faculty Of Engineering The Science University Of Tokyo
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Hasiguti Ryukiti
Department Of Metallurgy And Materials Science Faculty Of Engineering University Of Tokyo
関連論文
- γ-Irradiation of High Purity p-Type Silicon with Special Reference to Single Vacancy
- A Proposed Explanation of Irradiation Growth of Uranium
- A Disclination as a Growth Center of Surface Crystals
- VLS Growth Mechanism of Cd Crystals with Sn Impurities
- Internal Friction Peaks of Cold Worked Dilute Copper Alloys
- Abnormal Plastic After-Effect in Twisted Copper
- Temperature Dependence of Morphology and Growth Mechanisum of Vapor-Grown Cd crystals as Affected by Bi Impurities
- Thermally Induced Acceptor Centers in Germanium
- Internal Friction Peak in Quenched Gold
- Lifetime Measurements of Minority Carriers Across and Along a Dislocation Wall in a Germanium Crystal
- Lifetime Measurements of Minority Carriers in Deuteron Irradiated Germanium Crystals
- Role of Dislocation Rearrangement in the Elastic Modulus Recovery of Deformed Copper
- Electrical Resistivity and Defect Energy Levels in Reduced Titanium Dioxide at Low Temperatures
- Internal Friction of Alpha-Iron Due to Boron Atoms
- Impurity Trapped Interstitials and the Low Temperature Annealing Stages of Irradiated Copper
- Vacancy-Impurity Binding Energy Rule in Aluminum
- Modification and Interpretation of the Vacancy-Impurity Binding Energy Rule in Aluminum
- A Theory of Migration Energies of an Interstitial in Germanium and Silicon