Lifetime Measurements of Minority Carriers Across and Along a Dislocation Wall in a Germanium Crystal
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概要
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Lifetime of minority carriers were measured across and along a dislocation wall in a n-type germanium crystal. The spacing of dislocations in the wall is about 2×10^<-4> cm. Recombination diameter of a dislocation in the dislocation wall is 2.2×10^<-8> cm. The lifetime is unusually large (about 210μsec.), when it is measured along the wall. The usual value of lifetime is about 70μsec. in this specimen. It is suggested that the dislocation wall forms a p-type thin layer in a n-type crystal.
- 社団法人日本物理学会の論文
- 1957-12-05
著者
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HASIGUTI Ryukiti
Department of Metallurgy, University of Tokyo
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Hasiguti Ryukiti
Department Of Mechanical Engineering Faculty Of Engineering The Science University Of Tokyo
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Matsuura Etsuyuki
Department Of Metallurgy University Of Tokyo
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