Impurity Trapped Interstitials and the Low Temperature Annealing Stages of Irradiated Copper
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A semi-empirical method was developed to evaluate interaction energies of close impurity-atom-interstitial pairs. It was found that an undersize impurity atom provides with a deep trap for an interstitial, while an oversize impurity atom furnishes to an interstitial several shallow traps with different interaction energies. These results were applied to the annealing temperature problem of irradiated copper. Stage II was interpreted as due to the liberations and annihilations of several kinds of shallow trapped interstitials, and stage III was explained as due to the liberations and annihilations of deep trapped interstitials.
- 社団法人日本物理学会の論文
- 1960-10-05
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