γ-Irradiation of High Purity p-Type Silicon with Special Reference to Single Vacancy
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概要
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The behaviours and properties of a defect introduced into high purity p-type silicon by γ-irradiation at 82°K, which is considered to be a single vacancy, were investigated by means of Hall coefficient and resistivity measurements. It anneals out between about 150°K and about 220°K. This defect shows a character of net acceptors, of which the predominant energy level is located at about 0.2eV above the valence band. This means that the 5 electron model of a single vacancy should be adopted. Some experimental results pertinent to divacancies in p-type silicon were also obtained.
- 社団法人日本物理学会の論文
- 1965-04-05
著者
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Matsui Keiji
Department of Cardiovascular and Respiratory Medicine, Shiga University of Medical Science
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Matsui Keiji
Department Of Cardiovascular And Respiratory Medicine Shiga University Of Medical Science
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Matsui Keiji
Department Of Metallurgy University Of Tokyo
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HASIGUTI Ryukiti
Department of Metallurgy, University of Tokyo
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Hasiguti Ryukiti
Department Of Mechanical Engineering Faculty Of Engineering The Science University Of Tokyo
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