Electrical Resistivity and Defect Energy Levels in Reduced Titanium Dioxide at Low Temperatures
スポンサーリンク
概要
- 論文の詳細を見る
The resistivity of reduced rutile was measured from 80°K down to about 2°K. Activation energies derived from the slopes of resistivity curve are 0.01 〜 0.02 eV above about 20°K and 0.0005 〜 0.005 eV below about 20°K. It is proposed that the electronic conduction in this substance below about 20°K is due to the "defect level conduction" Conduction mechanisms at higher temperatures are also discussed.
- 社団法人日本物理学会の論文
- 1961-11-05
著者
-
Hasiguti Ryukiti
Department Of Mechanical Engineering Faculty Of Engineering The Science University Of Tokyo
-
Yonemitsu Hiro
Low Temperature Laboratory Toshiba Electric Company
-
MINAMI Kazuko
National Research Institute for Metals
-
Hasiguti R.r.
Department Of Matallurgy University Of Tokyo
-
Hasiguti R.R.
Department of Metallurgy, University of Tokyo
関連論文
- γ-Irradiation of High Purity p-Type Silicon with Special Reference to Single Vacancy
- A Proposed Explanation of Irradiation Growth of Uranium
- A Disclination as a Growth Center of Surface Crystals
- VLS Growth Mechanism of Cd Crystals with Sn Impurities
- Internal Friction Peaks of Cold Worked Dilute Copper Alloys
- Abnormal Plastic After-Effect in Twisted Copper
- Temperature Dependence of Morphology and Growth Mechanisum of Vapor-Grown Cd crystals as Affected by Bi Impurities
- Thermally Induced Acceptor Centers in Germanium
- Internal Friction Peak in Quenched Gold
- Lifetime Measurements of Minority Carriers Across and Along a Dislocation Wall in a Germanium Crystal
- Lifetime Measurements of Minority Carriers in Deuteron Irradiated Germanium Crystals
- Role of Dislocation Rearrangement in the Elastic Modulus Recovery of Deformed Copper
- Electrical Resistivity and Defect Energy Levels in Reduced Titanium Dioxide at Low Temperatures
- Internal Friction of Alpha-Iron Due to Boron Atoms
- Impurity Trapped Interstitials and the Low Temperature Annealing Stages of Irradiated Copper
- Vacancy-Impurity Binding Energy Rule in Aluminum
- Modification and Interpretation of the Vacancy-Impurity Binding Energy Rule in Aluminum
- A Theory of Migration Energies of an Interstitial in Germanium and Silicon
- Formation Energy of a Quenched-in Vacancy in Copper