Thermally Induced Acceptor Centers in Germanium
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概要
- 論文の詳細を見る
In crystals with a very small dislocation density such as in germanium, a long time is necessary to obtain an equilibrium concentration of Schottky-type defects. This is verified by successive-quenching experiments. Analysis of the equilibration process of acceptor centers in n-type germanium at high temperatures gives the activation energy of about 2.0eV. The formation energy of the thermally induced acceptors is found to be roughly 2 eV from the saturation values of the introduction curves of acceptors. Preliminary results of annealing of thermal acceptors are also described. The results are discussed in terms of vacancies thermally induced into the crystal.
- 社団法人日本物理学会の論文
- 1965-05-05
著者
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ISHINO Shiori
Department of Nuclear Engineering, School of Engineering Tokai University
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NAKAZAWA FUMIKO
Department of Obstetrics and Gynecology, Faculty of Medicine, University of Tokyo
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HASIGUTI Ryukiti
Department of Metallurgy, University of Tokyo
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Hasiguti Ryukiti
Department Of Mechanical Engineering Faculty Of Engineering The Science University Of Tokyo
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Ishino Shiori
Department Of Metallurgy University Of Tokyo
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Nakazawa Fumiko
Department Of Metallurgy University Of Tokyo
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Nakazawa Fumiko
Department of Chemistry, Faculty of Science, Nara Women's University
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