Vacancy-Impurity Binding Energy Rule in Aluminum

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概要

• 論文の詳細を見る
• 社団法人日本物理学会の論文
• 1965-04-05

著者

• Hasiguti Ryukiti

  Department Of Mechanical Engineering Faculty Of Engineering The Science University Of Tokyo

関連論文

• γ-Irradiation of High Purity p-Type Silicon with Special Reference to Single Vacancy
• A Proposed Explanation of Irradiation Growth of Uranium
• A Disclination as a Growth Center of Surface Crystals
• VLS Growth Mechanism of Cd Crystals with Sn Impurities
• Internal Friction Peaks of Cold Worked Dilute Copper Alloys
• Abnormal Plastic After-Effect in Twisted Copper
• Temperature Dependence of Morphology and Growth Mechanisum of Vapor-Grown Cd crystals as Affected by Bi Impurities
• Thermally Induced Acceptor Centers in Germanium
• Internal Friction Peak in Quenched Gold
• Lifetime Measurements of Minority Carriers Across and Along a Dislocation Wall in a Germanium Crystal
• Lifetime Measurements of Minority Carriers in Deuteron Irradiated Germanium Crystals
• Role of Dislocation Rearrangement in the Elastic Modulus Recovery of Deformed Copper
• Electrical Resistivity and Defect Energy Levels in Reduced Titanium Dioxide at Low Temperatures
• Internal Friction of Alpha-Iron Due to Boron Atoms
• Impurity Trapped Interstitials and the Low Temperature Annealing Stages of Irradiated Copper
• Vacancy-Impurity Binding Energy Rule in Aluminum
• Modification and Interpretation of the Vacancy-Impurity Binding Energy Rule in Aluminum
• A Theory of Migration Energies of an Interstitial in Germanium and Silicon

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