A Theory of Migration Energies of an Interstitial in Germanium and Silicon
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The migration energies of an interstitial in germanium and silicon were calculated using attractive polarization energies and Born-Mayer type repulsive energies. The results are 0.25 eV and 0.22eV for germanium and silicon, respectively. These values should be considered to be the upper limit values of migration energies.
- 社団法人日本物理学会の論文
- 1966-10-05
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