Conduction Band Structure Determined from the g-Values of the Excitons in VI B Transition Metal Dichalcogenides

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概要

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• The structure of the conduction bands in the layered MoS., MoSe., WS. andWSe. is discussed from the metal ton-dependence of the effective g-values of theA and B excitons with including both the spin-orbit and the interlayer interactions.It is concluded that the FJ conduction band is located below the T; conductionband in Mo chalcogenides and vice versa in W chalcogenides. The existence ofthe closely located interlayer split pair bands, arising from the two-dimensionalnature of the layered structure, is found to be important.for the chemical depend-ence of the j-values of the excitons.

• 社団法人日本物理学会の論文
• 1982-12-15

著者

• Fukutani Hirohito

  Department Of Physics Faculty Of Science University Of Tokyo

• Fukutani Hirohito

  Department Of Physics Faculty Of Science The University Of Tokyo

• TANAKA Masatoshi

  Laboratory of Applied Physics, Faculty of Engineering, Yokohama National University

• Kuwabara Goro

  Hyogo University Of Teacher Education

• Tanaka Masatoshi

  Laboratory Of Applied Physics Faculty Of Engineering Ykohama National University

• Fukutani Hirohito

  Department of Physics,Faculty of Science,University of Tokyo

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