Contrast Reversal of Kikuchi Bands in Transmission Electron Diffraction

概要

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Reversal angle θ_R where the Kikuchi band contrast changes from defect to excess were measured as a function of crystal thickness D for symmetrical Kikuchi bands (220) and (400) of Si at 80 kV. The defect region near the incident spot extends towards the outer part of the pattern with increasing crystal thickness. The experimental curves between θ_R adn D for (220) and (400) bands get nearer to each other with increasing crystal thickness. A defect region of Kikuchi bands still remains even in the thin crystal limit. Those results are compared with the theory of Okamoto et al. (J. Phys. Soc. Japan 30 (1971) 1960) corrected by inclusion of the exchange effects proposed by Shimamoto et al. (Technical Report of ISSP, Series A, No. 506 (1972)). The numerical calculations of the theory of Okamoto et al. taking into account the effect of the diffuse broadening of the incident beams explain qualitatively experimental results in the thick crystal region. Moreover, experimental positions of the defect region of (220) and (400) bands in the thin crystal limit agree with the theory when corrected by the exchange effects, providing an experimental confirmation of the exchange effect in the negative region of Kikuchi bands.
社団法人日本物理学会の論文
1972-11-05