Enhanced Optical Kerr Signal of GaAs/AlAs Multilayer Cavity with InAs Quantum Dots Embedded in Strain-Relaxed Barriers
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2009-08-25
著者
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Morita Ken
Center For Frontier Research Of Engineering Institute Of Technology And Science The University Of To
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Takahashi Tomoya
Center For Frontier Research Of Engineering Institute Of Technology And Science The University Of To
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Isu Toshiro
Center For Frontier Research Of Engineering Institute Of Technology And Science The University Of To
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KITADA Takahiro
Center for Frontier Research of Engineering, Institute of Technology and Science, The University of
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Kitada Takahiro
Center For Frontier Research Of Engineering Institute Of Technology And Science The University Of To
関連論文
- Optical Anisotropy of Strongly Enhanced Sum Frequency Generation in (113)B GaAs/AlAs Coupled Multilayer Cavity
- Ultrafast All-Optical Control of Excitons Confined in GaAs Thin Films
- Strong sum frequency generation in a GaAs/AlAs coupled multilayer cavity grown on a(113)B-oriented GaAs substrate (Special issue: Solid state devices and materials)
- Enhanced Optical Kerr Signal of GaAs/AlAs Multilayer Cavity with InAs Quantum Dots Embedded in Strain-Relaxed Barriers
- A GaAs/AlAs Multilayer Cavity with Self-Assembled InAs Quantum Dots Embedded in Strain-Relaxed Barriers for Ultrafast All-Optical Switching Applications
- Optical Kerr signals markedly enhanced by increasing quality factor in a GaAs/AlAs multilayer cavity (Special issue: Solid state devices and materials)
- Time-Resolved Measurements of Sum-Frequency Generation Strongly Enhanced in (113)B GaAs/AlAs Coupled Multilayer Cavity
- Optical Kerr Signals Markedly Enhanced by Increasing Quality Factor in a GaAs/AlAs Multilayer Cavity
- Strong Sum Frequency Generation in a GaAs/AlAs Coupled Multilayer Cavity Grown on a (113)B-Oriented GaAs Substrate
- Photoluminescence Properties of Self-Assembled InAs Quantum Dots Grown on (001) and (113)B GaAs Substrates by Molecular Beam Epitaxy under a Slow Growth Rate Condition
- Optical Anisotropy of ($11n$)-Oriented InGaAs Strained Quantum Wells with Finite Barrier Potential Calculated with Mixing Effects of the Spin–Orbit Split-Off Band
- Depolarization effect on optical control of exciton states confined in GaAs thin films
- Enhanced Two-Photon Absorption in a GaAs/AlAs Multilayer Cavity
- Generation of Terahertz Radiation from Two Cavity Modes of a GaAs/AlAs Coupled Multilayer Cavity
- GaAs/AlAs Multilayer Cavity with Er-Doped InAs Quantum Dots Embedded in Strain-Relaxed InGaAs Barriers for Ultrafast All-Optical Switches (Special Issue : Solid State Devices and Materials (2))
- Terahertz Radiation from a (113)B GaAs/AlAs Coupled Multilayer Cavity Generated by Ultrashort Laser Pulse Excitation (Special Issue : Solid State Devices and Materials (2))
- GaAs/AlAs Multilayer Cavity with InAs Quantum Dots Embedded in Strain-Relaxed Barriers for Planar-Type Optical Kerr Gate Switches
- Excitation Wavelength Dependence of Carrier Relaxation in Self-Assembled InAs Quantum Dots Embedded in Strain-Relaxed In0.35Ga0.65As Barrier Layers
- Marked Enhancement of Optical Kerr Signal in Proportion to Fourth Power of Quality Factor of a GaAs/AlAs Multilayer Cavity
- Strongly Enhanced Four-Wave Mixing Signal from GaAs/AlAs Cavity with InAs Quantnm Dots Embedded in Strain-Relaxed Barriers
- A GaAs/Air Multilayer Cavity for a Planar-Type Nonlinear Optical Device
- GaAs/AlAs Multilayer Cavity with Er-Doped InAs Quantum Dots Embedded in Thin Strain-Relaxed In
- GaAs/AlAs Multilayer Cavity with Er-Doped InAs Quantum Dots Embedded in Thin Strain-Relaxed In₀.₄₅Ga₀.₅₅As Barriers for Ultrafast All-Optical Switches (Special Issue : Solid State Devices and Materials)