Marked Enhancement of Optical Kerr Signal in Proportion to Fourth Power of Quality Factor of a GaAs/AlAs Multilayer Cavity
スポンサーリンク
概要
- 論文の詳細を見る
The enhanced optical Kerr effect in a GaAs/AlAs multilayer cavity has been studied by numerical simulation using the self-consistent transfer matrix method. The simulated Kerr signal intensity of the cavity mode ($\lambda \sim 1504$ nm) markedly increases with increasing multilayer period because of the high quality factor ($Q$) of the multilayer cavity. The simulation results reveal that Kerr signal intensity increases in proportion to $Q^{4}$, which is well explained by the enhanced nonlinear phase shift owing to (1) the large refractive index change induced by the strong internal optical field of the pump light and (2) the long photon lifetime of the probe light in the multilayer cavity.
- 2009-08-25
著者
-
Morita Ken
Center For Frontier Research Of Engineering Institute Of Technology And Science The University Of To
-
Isu Toshiro
Center For Frontier Research Of Engineering Institute Of Technology And Science The University Of To
-
Kitada Takahiro
Center For Frontier Research Of Engineering Institute Of Technology And Science The University Of To
-
Kanbara Toshiyuki
Center For Frontier Research Of Engineering Institute Of Technology And Science The University Of To
-
Yano Shinsuke
Center for Frontier Research of Engineering, Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
関連論文
- Optical Anisotropy of Strongly Enhanced Sum Frequency Generation in (113)B GaAs/AlAs Coupled Multilayer Cavity
- Ultrafast All-Optical Control of Excitons Confined in GaAs Thin Films
- Strong sum frequency generation in a GaAs/AlAs coupled multilayer cavity grown on a(113)B-oriented GaAs substrate (Special issue: Solid state devices and materials)
- Enhanced Optical Kerr Signal of GaAs/AlAs Multilayer Cavity with InAs Quantum Dots Embedded in Strain-Relaxed Barriers
- A GaAs/AlAs Multilayer Cavity with Self-Assembled InAs Quantum Dots Embedded in Strain-Relaxed Barriers for Ultrafast All-Optical Switching Applications
- Optical Kerr signals markedly enhanced by increasing quality factor in a GaAs/AlAs multilayer cavity (Special issue: Solid state devices and materials)
- Time-Resolved Measurements of Sum-Frequency Generation Strongly Enhanced in (113)B GaAs/AlAs Coupled Multilayer Cavity
- Optical Kerr Signals Markedly Enhanced by Increasing Quality Factor in a GaAs/AlAs Multilayer Cavity
- Strong Sum Frequency Generation in a GaAs/AlAs Coupled Multilayer Cavity Grown on a (113)B-Oriented GaAs Substrate
- Photoluminescence Properties of Self-Assembled InAs Quantum Dots Grown on (001) and (113)B GaAs Substrates by Molecular Beam Epitaxy under a Slow Growth Rate Condition
- Optical Anisotropy of ($11n$)-Oriented InGaAs Strained Quantum Wells with Finite Barrier Potential Calculated with Mixing Effects of the Spin–Orbit Split-Off Band
- Depolarization effect on optical control of exciton states confined in GaAs thin films
- Enhanced Two-Photon Absorption in a GaAs/AlAs Multilayer Cavity
- Generation of Terahertz Radiation from Two Cavity Modes of a GaAs/AlAs Coupled Multilayer Cavity
- GaAs/AlAs Multilayer Cavity with Er-Doped InAs Quantum Dots Embedded in Strain-Relaxed InGaAs Barriers for Ultrafast All-Optical Switches (Special Issue : Solid State Devices and Materials (2))
- Terahertz Radiation from a (113)B GaAs/AlAs Coupled Multilayer Cavity Generated by Ultrashort Laser Pulse Excitation (Special Issue : Solid State Devices and Materials (2))
- GaAs/AlAs Multilayer Cavity with InAs Quantum Dots Embedded in Strain-Relaxed Barriers for Planar-Type Optical Kerr Gate Switches
- Excitation Wavelength Dependence of Carrier Relaxation in Self-Assembled InAs Quantum Dots Embedded in Strain-Relaxed In0.35Ga0.65As Barrier Layers
- Marked Enhancement of Optical Kerr Signal in Proportion to Fourth Power of Quality Factor of a GaAs/AlAs Multilayer Cavity
- Strongly Enhanced Four-Wave Mixing Signal from GaAs/AlAs Cavity with InAs Quantnm Dots Embedded in Strain-Relaxed Barriers
- A GaAs/Air Multilayer Cavity for a Planar-Type Nonlinear Optical Device
- GaAs/AlAs Multilayer Cavity with Er-Doped InAs Quantum Dots Embedded in Thin Strain-Relaxed In
- GaAs/AlAs Multilayer Cavity with Er-Doped InAs Quantum Dots Embedded in Thin Strain-Relaxed In₀.₄₅Ga₀.₅₅As Barriers for Ultrafast All-Optical Switches (Special Issue : Solid State Devices and Materials)