GaAs/AlAs Multilayer Cavity with Er-Doped InAs Quantum Dots Embedded in Thin Strain-Relaxed In
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概要
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A GaAs/AlAs multilayer cavity with a \lambda/2 AlAs cavity layer, which includes Er-doped InAs quantum dots (QDs) embedded in a thin strain-relaxed In<inf>0.45</inf>Ga<inf>0.55</inf>As barrier, was fabricated. Structural and optical properties were characterized by scanning electron microscopy and optical reflection measurements, respectively. We found that the cavity quality of the Er-doped QD cavity was improved by reducing the thickness of the strain-relaxed In<inf>0.45</inf>Ga<inf>0.55</inf>As barriers in the \lambda/2 AlAs cavity layer. Furthermore, time-resolved optical measurements were performed to study the relaxation time of the photogenerated carriers in the Er-doped QD cavity. A full width at half maximum of a 1 ps with a large reduction of slowly decaying carriers was obtained for the Er-doped QD cavity with a thin strain-relaxed In<inf>0.45</inf>Ga<inf>0.55</inf>As barrier.
- 2013-04-25
著者
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Morita Ken
Center For Frontier Research Of Engineering Institute Of Technology And Science The University Of To
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Isu Toshiro
Center For Frontier Research Of Engineering Institute Of Technology And Science The University Of To
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Kitada Takahiro
Center For Frontier Research Of Engineering Institute Of Technology And Science The University Of To
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Nakagawa Yoshinori
Center For Frontier Research Of Engineering Institute Of Technology And Science The University Of To
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Ueyama Huga
Center for Frontier Research of Engineering, Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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Yasunaga Yukinori
Center for Frontier Research of Engineering, Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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