Optical Anisotropy of ($11n$)-Oriented InGaAs Strained Quantum Wells with Finite Barrier Potential Calculated with Mixing Effects of the Spin–Orbit Split-Off Band
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概要
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In-plane optical anisotropy was calculated for InGaAs strained quantum wells (QWs) with finite barrier potential on high-index ($11n$)-oriented GaAs substrates. The mixing effects of the spin–orbit split-off (SO) band were included by using $6 \times 6$ Hamiltonian based on the Luttinger–Kohn model. Calculated results reveal that optical anisotropy of the narrow QW is strongly dependent on barrier potential height, because the SO band mixing is enhanced by the strong confinement. Substrate off-angle dependence of photoluminescence intensity anisotropy observed in the ($11n$)A ($n = 3$, 4, and 5) In0.08Ga0.92As/GaAs strained QWs is well explained by the calculated curve with taking into account of the SO band mixing.
- 2008-10-25
著者
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Morita Ken
Center For Frontier Research Of Engineering Institute Of Technology And Science The University Of To
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Isu Toshiro
Center For Frontier Research Of Engineering Institute Of Technology And Science The University Of To
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Kitada Takahiro
Center For Frontier Research Of Engineering Institute Of Technology And Science The University Of To
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Niki Nobuyoshi
Center for Frontier Research of Engineering, Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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